Electrochromism in thin films of 3d transition metal oxides.

Transition metal oxides: extra thermodynamic stability as thin films.

The oxides of many transition metals wet their own metal surface. The adhesion energy at this interface (E(adh,ox/m)) provides extra stabilization, which lowers the O2 pressure required for oxide stability as a thin film below that required for bulk-oxide stability by the factor exp[(2gamma(g/ox) - E(adh,ox/m))/(tN(ox)RT)], where gamma(g/ox) is the surface energy of the oxide, t is the oxide fi...

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

We report on growth and physical properties of vanadium dioxide (VO2) films on model conducting oxide underlayers (Nb-doped SrTiO3 and RuO2 buffered TiO2 single crystals). The VO2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO2 film grown on Nb doped SrTiO3 shows over two orders of magnitude metal–insulator transition, while VO2 film on RuO2 buff...

Metal−Organic Framework Thin Films Composed of Free-Standing Acicular Nanorods Exhibiting Reversible Electrochromism

A uniform and crack-free metal−organic framework (MOF) thin film composed of free-standing acicular nanorods was grown on a transparent conducting glass substrate. The MOF thin film exhibits electrochromic switching between yellow and deep blue by means of a one-electron redox reaction at its pyrene-based linkers. The rigid MOF stabilizes the radical cations of the pyrene linkers at positive ap...

White lines and d-band occupancy for the 3d transition-metal oxides and lithium transition-metal oxides

Jason Graetz,1 Channing C. Ahn,1 Hao Ouyang,2 Peter Rez,3 and Brent Fultz1 1Division of Engineering and Applied Science M/C 138-78, California Institute of Technology, Pasadena, California 91125, USA 2National Chung Hsing University, Department of Materials Engineering, Taichung, Taiwan 402, Republic of China 3Department of Physics and Astronomy and CSSS, Arizona State University, Tempe, Arizon...

Metal-to-insulator transition in sputter deposited 3NiÕAl thin films